Thank you for taking interest in Rockwell Collins Aerospace part number 352-1090-240, which is listed with the NSN 5961-01-080-1220 and a product description of “Semiconductor Device Set.” In order to receive procurement options on this particular listing, we ask that you fill out and submit the form provided below with as much information as you can concerning your needs. By supplying our staff with key details on your desired quantity, pricing target, and expedited fulfillment timeframe, we can respond with a quote that has been specifically tailored to your unique specifications. We also ask that you make us aware of any restrictions that you may have as soon as possible, such as if you have a time constraint or are seeking unlisted items.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-080-1220 Item PartTypeName: SEMICONDUCTOR DEVICE SET | 5961 | 010801220 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 352-1090-240 | 5 | 2 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | CERAMIC ALL TRANSISTOR |
| ABHP | OVERALL LENGTH | 0.980 INCHES MAXIMUM ALL TRANSISTOR |
| ABKW | OVERALL HEIGHT | 0.300 INCHES MAXIMUM ALL TRANSISTOR |
| ABMK | OVERALL WIDTH | 0.865 INCHES MAXIMUM ALL TRANSISTOR |
| AKPV | MOUNTING FACILITY QUANTITY | 2 ALL TRANSISTOR |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL TRANSISTOR |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | NPN ALL TRANSISTOR |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| ASKA | COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE ALL TRANSISTOR |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE,DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM EMITTER TO B |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES MAXIMUM BASE CURRENT,DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT,DC ALL TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 140.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
| FEAT | SPECIAL FEATURES | CERAMIC CASE CONTAINS BERYLLIUM OXIDE-HANDLE AND DISPOSE IAW HAZMAT PROCEDURES. |
| TEST | TEST DATA DOCUMENT | 13499-352-1090 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
| TTQY | TERMINAL TYPE AND QUANTITY | 6 RIBBON ALL TRANSISTOR |
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