Thank you for taking interest in Raytheon Company part number 42635, which is listed with the NSN 5962-01-203-8638 and a product description of “Microcircuit Memory.” In order to receive procurement options on this particular listing, we ask that you fill out and submit the form provided below with as much information as you can concerning your needs. By supplying our staff with key details on your desired quantity, pricing target, and expedited fulfillment timeframe, we can respond with a quote that has been specifically tailored to your unique specifications. We also ask that you make us aware of any restrictions that you may have as soon as possible, such as if you have a time constraint or are seeking unlisted items.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-203-8638 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 012038638 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
722912-50 | 2 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 794.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | 3-STATE OUTPUT AND BIPOLAR AND PROGRAMMED AND SCHOTTKY AND W/ACTIVE PULL-UP |
CQSJ | INCLOSURE MATERIAL | CERAMIC OR GLASS OR METAL |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | PROM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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