Thank you for taking interest in Raytheon Company part number 423-800215, which is listed with the NSN 5961-00-238-6889 and a product description of “Semiconductordeviceset.” In order to receive procurement options on this particular listing, we ask that you fill out and submit the form provided below with as much information as you can concerning your needs. By supplying our staff with key details on your desired quantity, pricing target, and expedited fulfillment timeframe, we can respond with a quote that has been specifically tailored to your unique specifications. We also ask that you make us aware of any restrictions that you may have as soon as possible, such as if you have a time constraint or are seeking unlisted items.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-00-238-6889 Item PartTypeName: SEMICONDUCTOR DEVICE SET | 5961 | 002386889 | 0 | N | ||
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | U | |||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
423-800215 | 2 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL ALL TRANSISTOR |
ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM ALL TRANSISTOR |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM ALL TRANSISTOR |
ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM ALL TRANSISTOR |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT ALL TRANSISTOR |
ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
AXGY | MOUNTING METHOD | TERMINAL ALL TRANSISTOR |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL ALL TRANSISTOR |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE 2ND TRANSISTOR |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 50.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE 1ST TRANSISTOR |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR |
CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD ALL TRANSISTOR |
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