Thank you for taking interest in Lockheed Martin Corporation part number 63A133593P8, which is listed with the NSN 5961-01-251-1435 and a product description of “Semiconductor Devices Unitized.” In order to receive procurement options on this particular listing, we ask that you fill out and submit the form provided below with as much information as you can concerning your needs. By supplying our staff with key details on your desired quantity, pricing target, and expedited fulfillment timeframe, we can respond with a quote that has been specifically tailored to your unique specifications. We also ask that you make us aware of any restrictions that you may have as soon as possible, such as if you have a time constraint or are seeking unlisted items.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-251-1435 Item PartTypeName: SEMICONDUCTOR DEVICES,UNITIZED | 5961 | 012511435 | N | B | ||
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
B | A | |||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
019-005801-001 | 1 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.175 INCHES NOMINAL |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.352 INCHES NOMINAL |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-78 |
ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM BREAKDOWN VOLTAGE,GATE-TO-SOURCE,WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR AND 5.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE ALL TRANSISTOR |
CTQX | CURRENT RATING PER CHARACTERISTIC | 40.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR |
CTRD | POWER RATING PER CHARACTERISTIC | 367.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
TTQY | TERMINAL TYPE AND QUANTITY | 8 UNINSULATED WIRE LEAD |
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