Thank you for taking interest in Leonardo Mw Ltd part number DR511-1832-013H, which is listed with the NSN 5962-01-371-6294 and a product description of “Microcircuit Memory.” In order to receive procurement options on this particular listing, we ask that you fill out and submit the form provided below with as much information as you can concerning your needs. By supplying our staff with key details on your desired quantity, pricing target, and expedited fulfillment timeframe, we can respond with a quote that has been specifically tailored to your unique specifications. We also ask that you make us aware of any restrictions that you may have as soon as possible, such as if you have a time constraint or are seeking unlisted items.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-371-6294 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013716294 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | U | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| EDI8M832C70CB | 5 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| FEAT | SPECIAL FEATURES | ESD |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PIN |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | PACER DAWN |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,DIGITAL,MONOLITHIC 256K (32K X 8-BIT) CMOS,STATIC RANDOM ACCESS MEMORY (SRAM) |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZER | MEMORY DEVICE TYPE | RAM |
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