Thank you for taking interest in L 3 Communications Corporation part number S12001-163, which is listed with the NSN 5961-01-118-9018 and a product description of “Semiconductor Device Thyristor.” In order to receive procurement options on this particular listing, we ask that you fill out and submit the form provided below with as much information as you can concerning your needs. By supplying our staff with key details on your desired quantity, pricing target, and expedited fulfillment timeframe, we can respond with a quote that has been specifically tailored to your unique specifications. We also ask that you make us aware of any restrictions that you may have as soon as possible, such as if you have a time constraint or are seeking unlisted items.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-118-9018 Item PartTypeName: SEMICONDUCTOR DEVICE,THYRISTOR | 5961 | 011189018 | 0 | N | A | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | A | A | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
T2304D | C | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.260 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.366 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 0.50 AMPERES MAXIMUM ON-STATE CURRENT,RMS TOTAL AND 1.00 AMPERES MAXIMUM GATE TRIGGER CURRENT,PEAK AND 50.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS CASE |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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