Thank you for taking interest in Dla Land And Maritime part number 5962 89598, which is listed with the NSN 5962-01-446-9761 and a product description of “Microcircuit Memory.” In order to receive procurement options on this particular listing, we ask that you fill out and submit the form provided below with as much information as you can concerning your needs. By supplying our staff with key details on your desired quantity, pricing target, and expedited fulfillment timeframe, we can respond with a quote that has been specifically tailored to your unique specifications. We also ask that you make us aware of any restrictions that you may have as soon as possible, such as if you have a time constraint or are seeking unlisted items.
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| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| SR-1 | DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | 5962-8959815MXA |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZEQ | TIME RATING PER CHACTERISTIC | 85.00 NANOSECONDS NOMINAL ACCESS |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
| SR-1 | SPEC/STD CONTROLLING DATA | |
| CSWJ | (NON-CORE DATA) WORD QUANTITY | 131072 |
| SR-1 | MANUFACTURERS CODE | 67268 |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CZER | MEMORY DEVICE TYPE | RAM |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| SR-1 | NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | 5962-89598 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CRHL | (NON-CORE DATA) BIT QUANTITY | 1048576 |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND ELECTROSTATIC SENSITIVE AND LOW POWER AND BURN IN, MIL-STD-883, CLASS B |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8 STATIC RANDOM ACCESS MEMORY (SRAM) LOW POWER |
| FEAT | SPECIAL FEATURES | CIRCUIT FUNCTION-DUAL CE |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 PRINTED CIRCUIT |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
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