Request a Quote on Bae Systems Inc Part 310269P1 with the NSN 5962-01-064-4353

Part Number: 310269P1

Manufacturer: Bae Systems Inc

NSN: 5962-01-064-4353

NIIN: 010644353

Item Name : Microcircuit Memory

CAGE Code: 94117

FSC: 5962 Microcircuits Electronic

FSG: 59 Electrical and Electronic Equipment Components

Country : USA

NCB Code : 01

Thank you for taking interest in Bae Systems Inc part number 310269P1, which is listed with the NSN 5962-01-064-4353 and a product description of “Microcircuit Memory.” In order to receive procurement options on this particular listing, we ask that you fill out and submit the form provided below with as much information as you can concerning your needs. By supplying our staff with key details on your desired quantity, pricing target, and expedited fulfillment timeframe, we can respond with a quote that has been specifically tailored to your unique specifications. We also ask that you make us aware of any restrictions that you may have as soon as possible, such as if you have a time constraint or are seeking unlisted items.

Note : We Will Not Share Your Information To Any Third Parties.

Product Details

“*” Required Fields Are Compulsory

Contact Information

* By clicking this box, I acknowledge that I have read and accept the ASAP Semiconductor Terms and Conditions and agree that all quotes and purchase orders are exclusively subject to the ASAP Semiconductor Terms and Conditions.

I consent to receive email communications from ASAP Semiconductor and can unsubscribe at any time.
ASAP Semiconductor is a wholly independent aftermarket parts distributor.
This website is intended for quotations based on part numbers only. Please DO NOT submit drawings, technical data, or other specifications through this portal.

Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/customer-terms-conditions.aspx . All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.

Upload RFQ SHEET

If you have more than one item, upload your spreadsheet here

Upload File

Alongside part number 310269P1, you are encouraged to continue exploring our collection curated catalogs to find additional items that can accompany this Microcircuit Memory part with the NSN 5962-01-064-4353. For example, you can browse other Bae Systems Inc components that were produced under CAGE Code 94117 or listings that belong to FSC 5962 Microcircuits Electronic with ease on our website, with search tools provided for quick location. Furthermore, our staff is just a call or email away from assisting you with any inquiries or requests, so be sure to get started on the quotation process for part number 310269P1 and other desired offerings on Aerospace Spare.

NSN Information for Part Number 310269P1 with NSN 5962-01-064-4353, 5962010644353

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-064-4353 Item Description: Microcircuit Memory	5962	010644353	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U			U
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
310269p1	5	1	5

Characteristics Data of NSN 5962-01-064-4353, 5962010644353

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 735 INCHES MINIMUM AND 0 870 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 260 INCHES MINIMUM AND 0 293 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 050 INCHES MINIMUM AND 0 130 INCHES MAXIMUM
MEMORY	AFGA	OPERATING TEMP RANGE0 075 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATIONINTERRUPT AND CONTROL BOARD PN 1085274
MEMORY	CBBL	FEATURES PROVIDEDBIPOLAR AND WOPEN COLLECTOR AND PROGRAMMABLE AND PROGRAMMED
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC AND GLASS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN10 INPUT
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT