| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-455-2166 (014552166) |
| NCB Code | USA (01) |
| Manufacturer | Dla Land And Maritime |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 5962-90899 | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-9089901MXB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-9089901MXX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 59629089901MXA | dla land and maritime | microcircuit memory | 67268 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | MONOLITHIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -2.0 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT" |
| CZER | MEMORY DEVICE TYPE | EEPROM" |
| FEAT | SPECIAL FEATURES | 250NS" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 PRINTED CIRCUIT" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | MONOLITHIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -2.0 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT" |
| CZER | MEMORY DEVICE TYPE | EEPROM" |
| FEAT | SPECIAL FEATURES | 250NS" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 PRINTED CIRCUIT" |
| Relevant Components for NSN - 5962-01-455-2166, 5962014552166 | ||||
| 5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
| 5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
| 5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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