| MRC | Criteria | Characteristic |
|---|
| ADAQ | BODY LENGTH | 1.630 INCHES MINIMUM AND 1.670 INCHES MAXIMUM" |
| ADAT | BODY WIDTH | 0.090 INCHES MINIMUM AND 0.130 INCHES MAXIMUM" |
| ADAU | BODY HEIGHT | 0.440 INCHES MINIMUM AND 0.460 INCHES MAXIMUM" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | F15I" |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND BURN IN, MIL-STD-883, CLASS B AND MONOLITHIC" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 25 INPUT" |
| CRTL | CRITICALITY CODE JUSTIFICATION | CBBL" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 125.00 MILLIAMPERES MAXIMUM ABSOLUTE COLLECTOR" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8 STATIC RANDOM ACCESS MEMORY (SRAM) LOW POWER" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE" |
| CZEP | CAPITANCE RATING PER CHARACTERISTIC | 12.00 INPUT PICOFARADS MAXIMUM AND 14.00 OUTPUT PICOFARADS MAXIMUM" |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS NOMINAL ACCESS" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 PIN" |
| ADAQ | BODY LENGTH | 1.630 INCHES MINIMUM AND 1.670 INCHES MAXIMUM" |
| ADAT | BODY WIDTH | 0.090 INCHES MINIMUM AND 0.130 INCHES MAXIMUM" |
| ADAU | BODY HEIGHT | 0.440 INCHES MINIMUM AND 0.460 INCHES MAXIMUM" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | F15I" |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND BURN IN, MIL-STD-883, CLASS B AND MONOLITHIC" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 25 INPUT" |
| CRTL | CRITICALITY CODE JUSTIFICATION | CBBL" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 125.00 MILLIAMPERES MAXIMUM ABSOLUTE COLLECTOR" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8 STATIC RANDOM ACCESS MEMORY (SRAM) LOW POWER" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE" |
| CZEP | CAPITANCE RATING PER CHARACTERISTIC | 12.00 INPUT PICOFARADS MAXIMUM AND 14.00 OUTPUT PICOFARADS MAXIMUM" |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS NOMINAL ACCESS" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 PIN" |
