| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-283-0730 (012830730) |
| NCB Code | USA (01) |
| Manufacturer | Dla Land And Maritime, Lockheed Martin Corporation, Bae Systems Inc, Advanced Micro Devices Inc, Fujitsu Microelectronics Ltd, Northrop Grumman Systems Corporation |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 8200703RX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 2698-0375 | lockheed martin corporation | microcircuit memory | 08241 | RFQ |
| 201882-002 | bae systems inc | microcircuit memory | 81413 | RFQ |
| 5962-8200703BRA | dla land and maritime | microcircuit memory | 67268 | RFQ |
| AM2167-55 BRA | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| MB81C67-45Z-W-SC | fujitsu microelectronics ltd | microcircuit memory | 61271 | RFQ |
| 5962-8200703BRB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 82007 | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 8200703RA | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 645A747H01 | northrop grumman systems corporation | microcircuit memory | 97942 | RFQ |
| 5962-8200703BRX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 8200703RB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.2 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND STATIC OPERATION |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 17 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-283-0730, 5962012830730 | ||||
| 5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
| 5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
| 5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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