| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-067-7309 (010677309) |
| NCB Code | USA (01) |
| Manufacturer | Texas Instruments Inc, Fairchild Semiconductor Corp, Philips Semiconductors Ltd, Ge Aviation Systems Ltd, Raytheon Company, Advanced Micro Devices Inc, Intersil Corporation |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| SNJ54S189W-00 | texas instruments inc | microcircuit memory | 01295 | RFQ |
| 54S189FMQB | fairchild semiconductor corp | microcircuit memory | 07263 | RFQ |
| 54S189 BFA | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| 164912-01 | ge aviation systems ltd | microcircuit memory | 35351 | RFQ |
| S54S189W883B | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| 615357-904 | raytheon company | microcircuit memory | 37695 | RFQ |
| 54S189W-B | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| AM27S03BFA | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| 907314-101 | raytheon company | microcircuit memory | 3b150 | RFQ |
| AM27S03FM | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| 725004-144 | raytheon company | microcircuit memory | 05869 | RFQ |
| AM27S03FMB | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| AM29703FM-B | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| SNJ54S189W | texas instruments inc | microcircuit memory | 01295 | RFQ |
| 74S189 | intersil corporation | microcircuit memory | 34371 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.350 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND 3-STATE OUTPUT AND W/ENABLE AND W/DISABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | -0-004-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 FLAT LEADS |
| Relevant Components for NSN - 5962-01-067-7309, 5962010677309 | ||||
| 5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
| 5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
| 5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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