Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-412-6886 (014126886) |
NCB Code | USA (01) |
Manufacturer | Interlink Communications Inc, Herley Industries Inc, Hewlett-Packard Company, Military Specifications, Wavetek Rf Products Inc, Joint Army-Navy Specifications, Rockwell Collins Aerospace, Avago Technologies Us Inc, Lockheed Martin Corporation, Frequency Electronics Inc, Raytheon Company |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
40-001020-01 | interlink communications inc | semiconductor device diode | 30890 | RFQ |
101442-1 | herley industries inc | semiconductor device diode | 24469 | RFQ |
1N5711 1N6263 | hewlett-packard company | semiconductor device diode | 28480 | RFQ |
5082-2800 | hewlett-packard company | semiconductor device diode | 28480 | RFQ |
MIL-PRF-19500/444 | military specifications | semiconductor device diode | 81349 | RFQ |
4809-02-0001 | wavetek rf products inc | semiconductor device diode | 34280 | RFQ |
HP5082-2146 | hewlett-packard company | semiconductor device diode | 28480 | RFQ |
JANTX1N5711 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
353-3691-012 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
MIL-S-19500/444 | military specifications | semiconductor device diode | 81349 | RFQ |
5082-2800 | avago technologies us inc | semiconductor device diode | 50434 | RFQ |
1N5711 1N6263 | avago technologies us inc | semiconductor device diode | 50434 | RFQ |
TX1N5711 | military specifications | semiconductor device diode | 81349 | RFQ |
7849788P001 | lockheed martin corporation | semiconductor device diode | 03538 | RFQ |
JAN1N5711 | military specifications | semiconductor device diode | 81349 | RFQ |
A2S800 | frequency electronics inc | semiconductor device diode | 14844 | RFQ |
JANTX5711 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N5711-1 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N5711 | military specifications | semiconductor device diode | 81349 | RFQ |
925974-1B | raytheon company | semiconductor device diode | 82577 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
CTQN | Voltage Rating In Volts Per Characteristic | 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
AXGY | Mounting Method | TERMINAL |
AFZC | Function For Which Designed | SWITCHING |
CTSG | Maximum Operating Temp Per Measurement Point | 150.0 DEG CELSIUS JUNCTION |
CTQX | Current Rating Per Characteristic | 33.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE |
TEST | Test Data Document | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
ABHP | Overall Length | 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM |
ABBH | Inclosure Material | GLASS |
TTQY | Terminal Type And Quantity | 2 UNINSULATED WIRE LEAD |
ABJT | Terminal Length | 1.000 INCHES MINIMUM |
ADAV | Overall Diameter | 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM |
MRC | Decoded Requirement | Clear Text Reply |
CTMZ | Semiconductor Material | SILICON |
Relevant Components for NSN - 5961-01-412-6886, 5961014126886 | ||||
5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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