| Item Name | Transistor |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-196-9452 (011969452) |
| NCB Code | USA (01) |
| Manufacturer | Leonardo Mw Ltd, Selex Es Limited, Honeywell International Inc, Northrop Grumman Litef Gmbh, Military Specifications, Northrop Grumman Systems Corporation, Rockwell Collins Aerospace, International Rectifier Corporation, Bae Systems Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| VA-75-0228-001 | leonardo mw ltd | transistor | k0668 | RFQ |
| 6L-5502-105-00-443031 | selex es limited | transistor | d0327 | RFQ |
| 8502334-596 | honeywell international inc | transistor | 07187 | RFQ |
| 114513 | northrop grumman litef gmbh | transistor | d4856 | RFQ |
| MIL-PRF-19500/557 | military specifications | transistor | 81349 | RFQ |
| 932456-1 | northrop grumman systems corporation | transistor | 06481 | RFQ |
| 352-8012-110 | rockwell collins aerospace | transistor | 95105 | RFQ |
| IRFF131 | international rectifier corporation | transistor | 59993 | RFQ |
| JAN2N6796 | military specifications | transistor | 81349 | RFQ |
| G1505HEX | international rectifier corporation | transistor | k0512 | RFQ |
| 9333-00005 | bae systems inc | transistor | k0656 | RFQ |
| JANTX2N6796 | military specifications | transistor | 81349 | RFQ |
| JTX2N6796 | military specifications | transistor | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.180 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-205AF |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | DRAIN |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 8.00 AMPERES MAXIMUM SOURCE CURRENT AND 32.00 AMPERES MAXIMUM OFF-STATE CURRENT,PEAK |
| CTRD | POWER RATING PER CHARACTERISTIC | 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/557 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-01-196-9452, 5961011969452 | ||||
| 5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
| 5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
| 5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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