Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-156-8834 (011568834) |
NCB Code | USA (01) |
Manufacturer | Delco Electronics Corp, Military Specifications, Texas Instruments Inc, National Semiconductor Corporation, Hamilton Sundstrand Corporation, Raytheon Company, L 3 Communications Corporation, Lockheed Martin Corporation |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
ST7890071-203 | delco electronics corp | semiconductor device diode | 99974 | RFQ |
7890071-203 | delco electronics corp | semiconductor device diode | 99974 | RFQ |
1N4372A | military specifications | semiconductor device diode | 81349 | RFQ |
1N4372A | texas instruments inc | semiconductor device diode | 01295 | RFQ |
MIL-S-19500/127 | military specifications | semiconductor device diode | 81349 | RFQ |
1N5225B | national semiconductor corporation | semiconductor device diode | 27014 | RFQ |
MIL-PRF-19500/127 | military specifications | semiconductor device diode | 81349 | RFQ |
5E4820 51-1003 | hamilton sundstrand corporation | semiconductor device diode | 73030 | RFQ |
1N5225B | military specifications | semiconductor device diode | 81349 | RFQ |
7892144-203 | delco electronics corp | semiconductor device diode | 99974 | RFQ |
4032230-0703 | raytheon company | semiconductor device diode | 06845 | RFQ |
JAN1N5225B | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N4372A-1 | military specifications | semiconductor device diode | 81349 | RFQ |
1N4372A | l 3 communications corporation | semiconductor device diode | 73293 | RFQ |
4907923-02 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
JAN1N5225 | military specifications | semiconductor device diode | 81349 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 125.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
Relevant Components for NSN - 5961-01-156-8834, 5961011568834 | ||||
5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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