| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-057-2124 (010572124) |
| NCB Code | USA (01) |
| Manufacturer | Gilbert Engineering Co Inc, Inspektorat Wsparcia Sil Zbrojnych, Hamilton Sundstrand Corporation, Raytheon Company, Sundstrand International Corporation, Electronic Industries Inc, Military Specifications |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| SV2183 | gilbert engineering co inc | semiconductor device diode | 03877 | RFQ |
| 5961PL1253726 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 910C255-11 | hamilton sundstrand corporation | semiconductor device diode | 99167 | RFQ |
| 101623-1 | raytheon company | semiconductor device diode | 96214 | RFQ |
| SV2008 | gilbert engineering co inc | semiconductor device diode | 03877 | RFQ |
| 910C255-11 | sundstrand international corporation | semiconductor device diode | 83843 | RFQ |
| 1N2043A | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| JANTX1N3999A | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-PRF-19500/124 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N2970RB | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N3999A | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/124 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/272 | military specifications | semiconductor device diode | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 1.253 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.505 INCHES MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-4 |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | THREADED STUD |
| CCDG | OVERALL WIDTH ACROSS FLATS | 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM |
| CQJX | NOMINAL THREAD SIZE | 0.190 INCHES |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 370.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| PMLC | PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACE OPTION GOLD |
| THSD | THREAD SERIES DESIGNATOR | UNF |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 TAB,SOLDER LUG AND 1 THREADED STUD |
| Relevant Components for NSN - 5961-01-057-2124, 5961010572124 | ||||
| 5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
| 5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
| 5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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