| Item Name | Transistor |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-021-5214 (010215214) |
| NCB Code | USA (01) |
| Manufacturer | Electronic Industries Inc, Freescale Semiconductor Inc, Boeing Company The, Dcns Navires Armes Lorient, Semelab Limited, Sapa Operaciones Sl, Alcatel Lucent, Alcatel Telspace Unite Electronique, Thales Avionics Inc, St Microelectronics Ltd, Thales Sa, Beacon Industries Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| RELEASE6342B | electronic industries inc | transistor | 80131 | RFQ |
| 2N6059 | electronic industries inc | transistor | 80131 | RFQ |
| 2N6059 | freescale semiconductor inc | transistor | f4597 | RFQ |
| 000-8004-311 | boeing company the | transistor | 94756 | RFQ |
| RAR4492 | dcns navires armes lorient | transistor | f3015 | RFQ |
| 2N6059 | semelab limited | transistor | u3158 | RFQ |
| 27033100230 | sapa operaciones sl | transistor | 0124b | RFQ |
| 77090668 | alcatel lucent | transistor | f6180 | RFQ |
| 77090668 | alcatel telspace unite electronique | transistor | f6204 | RFQ |
| 3090679 | thales avionics inc | transistor | f9111 | RFQ |
| 2N6059 | st microelectronics ltd | transistor | f8859 | RFQ |
| 99090507 | thales sa | transistor | f6481 | RFQ |
| Q 5 3175 2272 | beacon industries inc | transistor | s3092 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.312 INCHES MINIMUM |
| ABKW | OVERALL HEIGHT | 0.350 INCHES NOMINAL |
| ABMK | OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 2 |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT-DARLINGTON CONNECTED |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | NPN |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 12.00 AMPERES MAXIMUM COLLECTOR CURRENT,DC OR 200.00 MILLIAMPERES MAXIMUM BASE CURRENT,DC |
| CTRD | POWER RATING PER CHARACTERISTIC | 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| Relevant Components for NSN - 5961-01-021-5214, 5961010215214 | ||||
| 5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
| 5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
| 5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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