| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-892-0919 (008920919) |
| NCB Code | USA (00) |
| Manufacturer | Boeing Aerostructures Australia Pty Ltd, Honeywell International Inc, Thales Nederland Bv, Joint Army-Navy Specifications, Military Specifications, Raytheon Company, Inspektorat Wsparcia Sil Zbrojnych, Freescale Semiconductor Inc, Adelco Elektronik Gmbh, Eca Etablissement Central Des, Thales Defense And Security Inc, Bauer Inc, Litton Systems Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 353-3061-000 | boeing aerostructures australia pty ltd | semiconductor device diode | 94987 | RFQ |
| 1801247-16 | honeywell international inc | semiconductor device diode | 55972 | RFQ |
| 352250010094 | thales nederland bv | semiconductor device diode | h0203 | RFQ |
| JAN1N3031B | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| MIL-PRF-19500/115 | military specifications | semiconductor device diode | 81349 | RFQ |
| 4178600-77 | raytheon company | semiconductor device diode | 05869 | RFQ |
| 5961PL1277873 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 1N3031 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| JAN1N3031BA | adelco elektronik gmbh | semiconductor device diode | c7191 | RFQ |
| JAN1N3031B | military specifications | semiconductor device diode | 81349 | RFQ |
| 5961008920919 | eca etablissement central des | semiconductor device diode | scy13 | RFQ |
| 848142-0301 | thales defense and security inc | semiconductor device diode | 65597 | RFQ |
| VBE890 1N3031B | thales nederland bv | semiconductor device diode | h0203 | RFQ |
| 1N3033B | military specifications | semiconductor device diode | 81349 | RFQ |
| BMI3593-31 | bauer inc | semiconductor device diode | 70882 | RFQ |
| 947179-312 | litton systems inc | semiconductor device diode | 13973 | RFQ |
| MIL-S-19500/115 | military specifications | semiconductor device diode | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 31.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/115 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-892-0919, 5961008920919 | ||||
| 5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
| 5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
| 5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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