Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-849-4183 (008494183) |
NCB Code | USA (00) |
Manufacturer | Freescale Semiconductor Inc, Ampex Systems Corp, Northrop Grumman Systems Corporation, Raytheon Company, Military Specifications, Thales Nederland Bv, Trw Electronic Components, Itt Telecom Products Corp, Litton Systems Inc, Rockwell Collins Aerospace, L 3 Communications Corporation, R F Power Labs Inc, Inspektorat Wsparcia Sil Zbrojnych |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
1N2989B | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
013-628 | ampex systems corp | semiconductor device diode | 92739 | RFQ |
GS810BN1 | northrop grumman systems corporation | semiconductor device diode | 26512 | RFQ |
4178600-089 | raytheon company | semiconductor device diode | 82577 | RFQ |
MIL-PRF-19500/124 | military specifications | semiconductor device diode | 81349 | RFQ |
3522 500 10055 | thales nederland bv | semiconductor device diode | h0203 | RFQ |
1N2989A | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
1N2989A | trw electronic components | semiconductor device diode | 01281 | RFQ |
0534336 | itt telecom products corp | semiconductor device diode | 21340 | RFQ |
947090-9892 | litton systems inc | semiconductor device diode | 13973 | RFQ |
353-1161-000 | rockwell collins aerospace | semiconductor device diode | 95105 | RFQ |
353-1161-001 | rockwell collins aerospace | semiconductor device diode | 95105 | RFQ |
VBE890 1N2989B | thales nederland bv | semiconductor device diode | h0203 | RFQ |
9300-256 | l 3 communications corporation | semiconductor device diode | 06141 | RFQ |
MILS19500-124 | military specifications | semiconductor device diode | 81349 | RFQ |
490052 | r f power labs inc | semiconductor device diode | 57143 | RFQ |
JAN1N2989B | military specifications | semiconductor device diode | 81349 | RFQ |
5961PL1277787 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CCDG | OVERALL WIDTH ACROSS FLATS | 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM |
CQJX | NOMINAL THREAD SIZE | 0.190 INCHES |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
THSD | THREAD SERIES DESIGNATOR | UNF |
TTQY | TERMINAL TYPE AND QUANTITY | 1 TAB,SOLDER LUG AND 1 THREADED STUD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION |
AKPV | MOUNTING FACILITY QUANTITY | 1 |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
AXGY | MOUNTING METHOD | THREADED STUD |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1.60 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS CASE |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
Relevant Components for NSN - 5961-00-849-4183, 5961008494183 | ||||
5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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