Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-761-3857 (007613857) |
NCB Code | USA (00) |
Manufacturer | Joint Army-Navy Specifications, Airbus Defence And Space Limited, Northrop Grumman Systems Corporation, Bae Systems Inc, Semi General Inc, Micrometrics Inc, Fibre Productsision Of Ikelheimer Ernst Inc, Cobham Advanced Electronic Solutions Inc, Military Specifications, Raytheon Company |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
USN1N830AM | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
5800583-926200.111 | airbus defence and space limited | semiconductor device diode | c0426 | RFQ |
019-005893-001 | northrop grumman systems corporation | semiconductor device diode | 26916 | RFQ |
1047634P1 | bae systems inc | semiconductor device diode | 94117 | RFQ |
UXAN1N830A | semi general inc | semiconductor device diode | 3bby6 | RFQ |
UXAN1N830A | micrometrics inc | semiconductor device diode | 0eff4 | RFQ |
1N830 | fibre productsision of ikelheimer ernst inc | semiconductor device diode | 93321 | RFQ |
MA41431 | cobham advanced electronic solutions inc | semiconductor device diode | 96341 | RFQ |
MIL-S-19500/229 | military specifications | semiconductor device diode | 81349 | RFQ |
JAN1N830A | military specifications | semiconductor device diode | 81349 | RFQ |
617952-1 | raytheon company | semiconductor device diode | 37695 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/229 GOVERNMENT SPECIFICATION |
ADAV | OVERALL DIAMETER | 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS |
CTQX | CURRENT RATING PER CHARACTERISTIC | 25.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
Relevant Components for NSN - 5961-00-761-3857, 5961007613857 | ||||
5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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